This image shows Joachim Burghartz

Joachim Burghartz

Prof. Dr.-Ing.

Director of the institute
Institute of Nano and Microelectronic Systems (INES)

Contact

Pfaffenwaldring 47
70569 Stuttgart
Deutschland

  1. 2016

    1. Seetharaman, N., Richter, H., & Burghartz, J. N. (2016). A Fully Integrated ASIC For Energy Harvesting From Glucose Biofuel Cell. MPC / Multi-Projekt-Chip-Gruppe Baden-Württemberg : Tagungsband Zum Workshop Der Multiprojekt-Chip-Gruppe Baden-Württemberg, 55, 35–42. http://www.mpc-gruppe.de/files/content/workshops-volums/MPC_Workshopband_55.pdf
  2. 2015

    1. Zhang, Y., Scherjon, C., & Burghartz, J. N. (2015). Cost-Efficient Integration of Industrial Applications Using Smart Power Gate Arrays. IEEE Transactions on Industrial Electronics, 62(5), 2903–2911. https://doi.org/10.1109/TIE.2014.2363055
  3. 2014

    1. Burghartz, R., & Berberich, K. (2014). MPI-INF at the NTCIR-11 Temporal Query Classification Task. In N. Kando, H. Joho, & K. Kishida (Eds.), NTCIR. National Institute of Informatics (NII). http://dblp.uni-trier.de/db/conf/ntcir/ntcir2014.html#BurghartzB14
  4. 2011

    1. Burghartz, J. N. (2011). Ultra-Thin Chips : A New Paradigm in Silicon Technology. Seminar Series in Electrical Engineering / Physical and Wave Electronics Area. Seminar Series in Electrical Engineering / Physical and Wave Electronics Area, Los Angeles, USA.
    2. Asif, A., Richter, H., & Burghartz, J. N. (2011). Realization of 100 V ultra-thin single-crystal silicon LDMOS. 2011 Semiconductor Conference Dresden. Semiconductor Conference Dresden (SCD), 2011, Dresden, Germany. https://doi.org/10.1109/SCD.2011.6068720
  5. 2009

    1. Asif, A., Richter, H., & Burghartz, J. N. (2009). High-voltage (100 V) ChipfilmTM single-crystal silicon LDMOS transistor for integrated driver circuits in flexible displays. Advances in Radio Science, 7, 237–242. https://doi.org/10.5194/ars-7-237-2009
  6. 2008

    1. Sagkol, H., Rejaei, B., & Burghartz, J. N. (2008). Thermal Issues in Micromachined Spiral Inductors for High-Power Applications. IEEE Transactions on Electron Devices, 55(11), 3288–3294. https://doi.org/10.1109/TED.2008.2005127
  7. 2007

    1. Fregonese, S., Zhuang, Y., & Burghartz, J. N. (2007). Modeling of Strained CMOS on Disposable SiGe Dots: Strain Impacts on Devices’ Electrical Characteristics. IEEE Transactions on Electron Devices, 54(9), 2321–2326. https://doi.org/10.1109/TED.2007.902719
  8. 2006

    1. Burghartz, J. N. (2006). RF Passives on Silicon : The Intended and the Unintended.
    2. Sagkol, H., Rejaei, B., & Burghartz, J. N. (2006). High-Q Saddle-Add-On Metallization (SAM) Inductors On HRS Substrates. Digest of Papers. 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 245–248. https://doi.org/10.1109/SMIC.2005.1587958
    3. Wu, H.-C., Mijalkovic, S., & Burghartz, J. N. (2006). A Unified Parameter Extraction Procedure For Scalable Bipolar Transistor Model Mextram. NSTI Nanotech 2006. Volume 3 : The Nanotechnology Conference and Trade Show, Boston, May 7-11, 2006 : An Interdisciplinary and Integrative Forum on Nanotechnology, Biotechnology and Microtechnology, 872–875.
  9. 2005

    1. Bartek, M., Sinaga, S., & Burghartz, J. N. (2005). Vertical Integration of RF Passive Components in Stacked Wafer-Level Packages. Conference Programme & Proceedings : 15th European Microelectronics and Packaging Conference & Exhibition : June 12 - 15, 2005, Brugge, Belgium, 190–194.
    2. Burghartz, J. N. (2005). Review of add-on process modules for high-frequency silicon technology. Microelectronics Reliability, 45(3), 409–418. https://doi.org/10.1016/j.microrel.2004.12.002
    3. Burghartz, J. N. (2005). Passive Components. In J. D. Cressler (Ed.), Silicon heterostructure handbook : materials, fabrication, devices, circuits, and applications of SiGe and Si strained-layer epitaxy (pp. 249–263). CRC Press. https://doi.org/10.1201/9781315221137
    4. Sinaga, S., Bartek, M., & Burghartz, J. N. (2005). On-Chip RF Isolation in Stacked Wafer-Level Packages. Conference Programme & Proceedings : 15th European Microelectronics and Packaging Conference & Exhibition : June 12 - 15, 2005, Brugge, Belgium, 303–307.
    5. Bartek, M., Sinaga, S., & Burghartz, J. N. (2005). Influence of via-connections on electrical performance of vertically-spaced RF passives. Proceedings Electronic Components and Technology, 2005. ECTC ’05., 2, 1584–1589. https://doi.org/10.1109/ECTC.2005.1442001
    6. Sagkol, H., Rejaei, B., & Burghartz, J. N. (2005). High Aspect Ratio Copper Electroplating Process For Compact Coplanar Transmission Line Implementation. Proceedings : 16th ProRISC and 8th SAFE : Annual Workshop on Circuits, Systems and Signal Processing and Annual Workshop on Semiconductor Advances for Future Electronics and Sensors : November 17 - 18, 2005, Veldhoven, the Netherlands, 43–46.
    7. Polyakov, A., Bartek, M., & Burghartz, J. N. (2005). Area-Selective Adhesive Bonding Using Photosensitive BCB For WL CSP Applications. Journal of Electronic Packaging, 127, 7–11. https://doi.org/10.1115/1.1846059
  10. 2004

    1. Burghartz, J. N., Rejaei, B., & Schellevis, H. (2004). Saddle Add-On Metallization for RF-IC Technology. IEEE Transactions on Electron Devices, 51(3), 460–466. https://doi.org/10.1109/TED.2004.823325
    2. Mijalkovic, S., & Burghartz, J. N. (2004). Compact Modelling of SiGe HBTs. Conference Proceedings : 12th European Gallium Arsenide and Other Compound Semiconductors Application Symposium : Monday 11th & Tuesday 12th October 2004, 247–250. https://doi.org/10.6092/unibo/amsacta/1097
    3. Burghartz, J. N. (2004). Add-on process modules - an economic enhancement for high-frequency silicon technology. 2004 24th International Conference on Microelectronics, 1, 81–88. https://doi.org/10.1109/ICMEL.2004.1314563
  11. 2003

    1. Burghartz, J. N., & Rejaei, B. (2003). On the Design of RF Spiral Inductors on Silicon. IEEE Transactions on Electron Devices, 50(3), 718–729. https://doi.org/10.1109/TED.2003.810474
    2. Polyakov, A., Bartek, M., & Burghartz, J. N. (2003). Area-Selective Adhesive Bonding Using Photosensitive BCB for WLCSP Applications. Collection of Papers Presented at the 3rd International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics, Polytronic 2003 : 21 - 23 October 2003, Montreux, Switzerland. 3rd International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics, Polytronic 2003, Montreux, Switzerland.
    3. Sinaga, S., Bartek, M., & Burghartz, J. N. (2003). Analysis and optimization of Via-Connected Spiral Inductors in RF Silicon Technology. Proceedings 2003 : ProRISC, SAFE : November 25 - 27 2003, Veldhoven, the Netherlands. 14th ProRISC Workshop and the 6th SAFE Workshop, Veldhoven, The Netherlands.
  12. 2002

    1. Polyakov, A., Bartek, M., & Burghartz, J. N. (2002). Wafer-Level Chip-Scale Packaging for RF Applications : Progress Report June 2002.
    2. Polyakov, A., Bartek, M., & Burghartz, J. N. (2002). Wafer-Level Chip-Scale Packaging for RF Applications. 2002 Proceedings : SAFE-ProRISC-SeSens, November 27 - 29, 2002, Veldhoven, the Netherlands, 87–90.
    3. Rejaei, B., Burghartz, J. N., & Schellevis, H. (2002). Saddle Add-On Metallisation (SAM) For RF Inductor Implementation in Standard IC Interconnects. Digest : International Electron Devices Meeting, 467–470. https://doi.org/10.1109/IEDM.2002.1175880
    4. Rossi, L., Rejaei, B., & Burghartz, J. N. (2002). Optimization of Ground Shield Patterning For Spiral Inductors in Integrated Circuits.
    5. Sinaga, S., Bartek, M., & Burghartz, J. N. (2002). Modeling and Analysis of Substrate Coupling in Silicon Integrated Circuits. 2002 Proceedings : SAFE-ProRISC-SeSens, November 27 - 29, 2002, Veldhoven, the Netherlands, 704–707.
    6. Polyakov, A., Bartek, M., & Burghartz, J. N. (2002). Mechanical Reliability of Silicon Wafers with Through-Wafer Vias for Wafer-Level Packaging. Proceedings of the 13th European Symposium on Reliability of Electron Devices, Failure Physics, and Analysis : 7-11 October 2002, Rimini, Italy. 13th European symposium on reliability of electron devices, failure physics, and analysis, Rimini, Italy.
    7. Polyakov, A., Bartek, M., & Burghartz, J. N. (2002). Mechanical Reliability of Micromachined Silicon Wafers with Deep Rectangular Recesses and Via-Hole Fences. In J. Saneistr & P. Ripka (Eds.), Book of abstracts : Eurosensors XVI, The 16th European Conference on Solid-State Transducers, September 15 - 18, 2002, Prague, Czech Republic (pp. 255–256). Czech Technical University.
  13. 2001

    1. Burghartz, J. N. (2001). Tailoring Logic CMOS for RF Applications. 2001 International Symposium on VLSI Technology, Systems, and Applications : Proceedings of Technical Papers, 150–153. https://doi.org/10.1109/VTSA.2001.934505
    2. Burghartz, J. N. (2001). Status and trends of silicon RF technology. Microelectronics Reliability, 41(1), 13–19. https://doi.org/10.1016/S0026-2714(00)00198-0
    3. Polyakov, A., Bartek, M., & Burghartz, J. N. (2001). Mechanical stability and handling-induced failure of micromachined wafers for RF applications. 2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems : Digest of Papers, 102–109. https://doi.org/10.1109/SMIC.2001.942349
    4. Polyakov, A., Bartek, M., & Burghartz, J. N. (2001). An Investigation into Mechanical Strength of Silicon Wafers with Bulk-Micromachined Structures. In H. Varwijk (Ed.), Book of abstracts : SAFE2001 Semiconductor Advances for Future Electronics, ProRISC2001 Program for Research on Integrated Systems and Circuits, SeSens2001 Semiconductor Sensor and Actuator Technology (pp. 163–166). STW, Technology Foundation.
  14. 2000

    1. Mahmoudi, R., Tauritz, J. L., & Burghartz, J. N. (2000). Spread spectrum communication system performance optimization based on collector epilayer engineering. 2000 Topical Meetings on Silicon Monolithic Integrated Circuits in RF Systems : Digest of Papers, 167–172. https://doi.org/10.1109/SMIC.2000.844324
    2. Burghartz, J. N. (2000). Quo Vadis Microelectronics? DocVision.
  15. 1999

    1. Burghartz, J. N. (1999). Status and Trends of Silicon RF Technology. In H. E. Maes (Ed.), ESSDERC ’99 : proceedings of the 29th European Solid-State Device Research Conference : Leuven, Belgium, 13-15 September, 1999 (pp. 56–63). Editions Frontières.
    2. Burghartz, J. N. (1999). New Approaches for Wireless Systems on Silicon. In A. B. Smolders & M. P. van Haarlem (Eds.), Perspectives on Radio Astronomy : Technologies for Large Antenna Arrays, Proceedings of the Conference held at the ASTRON Institute in Dwingeloo on 12-14 April 1999 (pp. 149–153). ASTRON.
  16. 1998

    1. Burghartz, J. N. (1998). Spiral Inductors On Silicon : Status And Trends. International Journal of RF and Microwave Computer-Aided Engineering, 8(6), 422–432. https://doi.org/10.1002/(SICI)1099-047X(199811)8:6<422::AID-MMCE3>3.0.CO;2-K
    2. Edelstein, D. C., & Burghartz, J. N. (1998). Spiral and solenoidal inductor structures on silicon using Cu-damascene interconnects. Proceedings of the IEEE 1998 International Interconnect Technology Conference, 18–20. https://doi.org/10.1109/IITC.1998.704740
    3. Burghartz, J. N. (1998). Progress in RF inductors on silicon-understanding substrate losses. International Electron Devices Meeting 1998 : Technical Digest, 523–526. https://doi.org/10.1109/IEDM.1998.746412
    4. Jenkins, K. A., & N., B. J. (1998). Measurement of the switching speed of single FET’s. IEEE Transactions on Electron Devices, 45(6), 1369–1373. https://doi.org/10.1109/16.678581
    5. Burghartz, J. N. (1998). Integrated Multilayer RF Passives in Silicon Technology. In S. Kayali (Ed.), 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems : Digest of Papers (pp. 141–147). IEEE. https://doi.org/10.1109/SMIC.1998.750209
  17. 1997

    1. Burghartz, J. N. (1997). Silicon RF Technology : The Two Generic Approaches. In H. Grünbacher (Ed.), ESSDERC ’97 : Proceedings of the 27th European Solid-State Device Research Conference, Stuttgart, Germany, 22 - 24 September 1997 (pp. 143–153). Editions Frontières. https://doi.org/10.1109/ESSDERC.1997.194388
  18. 1996

    1. Burghartz, J. N., Jenkins, K. A., & Soyuer, M. (1996). Multi-Level Spiral Inductors Using VLSI Interconnect Technology. IEEE Electron Device Letters, 17(9), 428–430. https://doi.org/10.1109/55.536282
    2. Burghartz, J. N. (1996). BiCMOS Process Integration and Device Optimization : Basic Concepts and New Trends. Electrical Engineering, 79(5), 313–327. https://doi.org/10.1007/BF01235872
  19. 1993

    1. Burghartz, J. N., & Mii, Y.-J. (1993). Reliability imposed design aspects of submicrometer polysilicon-emitter bipolar transistors. IEEE Electron Device Letters, 14(7), 363–365. https://doi.org/10.1109/55.225574
  20. 1987

    1. Burghartz, J. N., & von Münch, W. (1987). Optimization of Lateral Magnetotransistors with Integrated Signal Amplification. Sensors and Actuators, 11(1), 91–98. https://doi.org/10.1016/0250-6874(87)85007-2
    2. Burghartz, J. N. (1987). Integrierte Magnetfeldsensoren auf der Basis des Lateralen Magnetotransistors [Dissertation]. Universität Stuttgart.

Joachim N. Burghartz was born in Aachen in 1956. He studied electrical engineering at RWTH Aachen and graduated (Dipl.-Ing.) in 1982. In 1987 he received his Ph. D. (Dr.-Ing.) from Universität Stuttgart.

Between 1982 and 1987 he was a member of the research team on sensors with integrated signal conversion, particularly magnetic field sensors, at Universität Stuttgart.

From 1987 until 1998 he worked at the IBM Thomas J. Watson lab in Yorktown Heights, NY, on selective silicon epitaxial, Si and SiGe high-speed transistor designs and integration processing as well as in CMOS technology. Following this, he expanded his research into the development of passive components, especially integrated high-performance silicon coils.

From 1998 until 2005, he was Full Professor at TU Delft and headed the High-Frequency Technology and Components (HiTeC) research team. He concentrated his research on Silicon HF technology with a focus spanning from work on materials to design on circuit components.

In addition, from March 2001 until August 2005, he served as Scientific Director at TU Delft´s Institute of Microelectronics and Submicron Technology (DIMES) .

Since October 2005, Prof. Dr. Burghartz has been Director and Chairman of the Board at Instituts für Mikroelektronik Stuttgart (IMS CHIPS) as well as being Full Professor at Universität Stuttgart.

He has also been heading the Institute for Nano and Microelectronic Systems (INES) at Universität Stuttgart since March 1st, 2006.

August 18th, 2013, marked his launch as Manager of the IMS Mikro-Nano Produkte GmbH.

In recognition of his academic achievements he has been awarded prizes, such as the IEEE Electron Devices Society´s J. J. Ebers Award 2014, the Landesforschungspreis Baden-Württemberg 2009 and the ISSCC Jack Raper Award 2008. He is an IEEE Fellow and was Vice President of the IEEE Electron Devices Society between 2009 and 2013 as well as having been Associate Editor of the IEEE Transactions on Electron Devices between 2001 and 2006.
He was a Member of the Executive and Technical Committees at the BCTM (General Chairman 2000), IEDM, ESSDERC, ISICDG, VLSI-TSA, DCIS and SBMICRO symposia. His list of publications include 91 papers (peer review) in journals, 244 publications for symposia, 3 books, 4 book chapters and 16 patents (patent families). A particular highlight is the technical book he edited commemorating the 60/35th anniversary of the IEEE Electron Devices Society „Guide to State-of-the-Art Electron Devices“ (Wiley&Sons Publishers) which was awarded the 2013 PROSE Award as best technical book of the year in engineering & technology.

Dr. Mourad Elsobky (U Stuttgart 2021)
Robert Bosch GmbH, Reutlingen, Germany


Dr. Lars Heuken (U Stuttgart 2020)
Knorr Bremse GmbH, Stuttgart, Germany


Dr. Muhammad Alshahed (U Stuttgart 2019)
Robert Bosch GmbH, Reutlingen, Germany


Dr. Golzar Alavi (U Stuttgart 2019)
Robert Bosch GmbH, Schwieberdingen, Germany


Dr. Yigit Mahsereci, (U Stuttgart 2018) 
IMS CHIPS, Stuttgart, Germany


Dr. Saleh Ferwana (U Stuttgart 2017)
IMS CHIPS, Stuttgart, Germany


Dr. Moustafa Nawito (U Stuttgart 2017)
PolyMath Analog, Stuttgart, Germany


Dr. Michael Jurisch (U Stuttgart 2017)
IMS CHIPS, Stuttgart, Germany


Dr. Mahadi-Ul Hassan (U Stuttgart 2017)
TDK Seicos, München, Germany


Dr. Shen-Huei Sun (U Stuttgart 2015)
IMS CHIPS, Stuttgart, Germany


Dr. Fabian Utermöhlen (U Stuttgart 2015)
Robert Bosch GmbH, Stuttgart, Germany


Dr. Tarek Hussein (U Stuttgart 2015)
Robert Bosch GmbH, Reutlingen, Germany


Dr. Tarek Zaki (U Stuttgart 2014)
Robert Bosch GmbH, Reutlingen, Germany


Dr. Daniel Etter (U Stuttgart 2014)
Infineon Technologies AG, München, Germany


Dr. Yipin Zhang (U Stuttgart 2013)
Intel, München, Germany


Dr. Nicoleta Wacker (U Stuttgart 2013)


Dr. Jun Tian (TU Delft 2013)
Mapper Lithography, Netherlands


Dr. Stefan Endler (U Stuttgart 2012)
Robert Bosch GmbH, Reutlingen, Germany


Dr. Evangelos Angelopoulos (U Stuttgart 2011)
Infineon Technologies AG, München, Germany


Dr. Ali Asif (U Stuttgart 2011)
GC University, Department of Physics, Lahore, Pakistan


Prof. Koen Buismann (TU Delft 2011)
Chalmers University, Sweden


Dr. Yue Ma (TU Delft 2011)
Mapper Lithography, Netherlands


Prof. Huseyin Sagkol (TU Delft 2011)
Fatih University, Turkey


Dr. Saoer Sinaga (TU Delft 2010)
Philips, Netherlands


Dr. Martin Zimmermann (U Stuttgart 2010)
IMS CHIPS, Stuttgart, Germany


Dr. Cong Huang (TU Delft 2010)
TU Delft, Netherlands


Dr. Edmund Neo (TU Delft 2010)
NXP, Netherlands


Dr. Theodoros Zoumpoulidis (TU Delft 2010)
TU Delft, Netherlands


Dr. Pedram Khalili Amiri (TU Delft 2008)
University of California at Los Angeles (UCLA), USA


Dr. Marina Vroubel
NXP, Netherlands


Prof. Yan Zhuang
Wright State University, Dayton, Ohio, USA


Dr. Hsien-Chen Wu (TU Delft 2007)
Texas-Instruments, Dallas, USA


Dr. Alexander Polyakov (TU Delft 2006)
Alpha Media Group


Dr. Vittorio Cuoco (TU Delft 2006)
NXP, Netherlands


Dr. Marco Spirito (TU Delft 2006)
TU Delft, Netherlands


Dr. Mark van der Heijden (TU Delft 2005)
NXP Research, Netherlands


Dr. Ronald Dekker (TU Delft 2004)
Philips Research, Netherlands


Dr. Pham Phuong Nga (TU Delft 2003)
Imec, Belgium

  • IEEE Electron Devices Society´s J. J. Ebers Award 2014

  • PROSE Award 2013 (informations about "Guide to State-of-the-Art Electron Devices")

  • Research Award of the State of Baden-Wuerttemberg, Germany (2009)
    (Landesforschungspreis für Angewandte Forschung)

  • IEEE ISSCC Jack Raper Award for Outstanding Technology Directions Paper (2008)

  • ESSDERC Best Paper Award (1992)

  • IBM Technical Achievement Awards (1990 and 1994)

  • IBM Technical Disclosure Achievement Awards (4 awards in total)
  • IEEE Cledo Brunetti Awards Committee (2005 - 2008)

  • IEEE Fellow (since 2001)

  • IEEE Electron Devices Society (EDS)
    • Executive Committee (since 2009)
    • Vice President Technical Activities (since 2009)
    • Distinguished Lecturer
    • Board of Governors (BoG; formerly AdCom; since 2005)
    • Associate Editor IEEE Transactions on Electron Devices (2001-2006)
    • Technical Activities Committee (2006-2009)
    • Region/Chapters Committee (since 2006)
    • Meetings Committee (since 2009)
    • Newsletter Committee (since 2013)
    • Publications Committee (since 2009)
    • EDS Germany Chapter Chair (ad interim; since 2009)

  • IEEE Technical conference committee member (list incomplete)
    • BCTM (1996-2001)
    • ESSDERC (since 1998)
    • IEDM (1993-95 and 1998-99)
    • ISCDG (since 2001)
    • SiRF (2003-2007)
    • TSA-VLSI (since 2011)
    • DCIS (2006, 2009)
    • MST Congress (since 2001)
    • SBMicro (2014)

  • microTEC Südwest (MST Excellence Cluster, Germany)
    • Member Cluster Board
    • Coordinator MST production platform PRONTO
  • 1st Self-aligned SiGe bipolar transistor (1989)
  • 1st  AC characteristicsof SiGe bipolar transistor (1990)
  • 1st  SiGe bipolar circuit demonstration (1990)

ibm_sige_team_500px


Back row: Joachim Burghartz, Jim Comfort, Eduard de Frésart, Emmanuel Crabbé
Middle row: Gary Patton, Jack Sun
Front row: Hans Stork, David Harame

Milestones with key references:

Reduction of coil metal losses

  • J.N. Burghartz, D.C. Edelstein, K.A. Jenkins, C. Jahnes, C.Uzoh, E.J. O'Sullivan, K.K. Chan, M. Soyuer, P. Roper, S. Cordes,
  • "Monolithic spiral inductors fabricated using a VLSI Cu-damascene interconnect technology and low-loss substrates",
    Techn. Dig. IEEE International Electron Devices Meeting (IEDM), 1996, pp. 99-102.
  • J.N. Burghartz, B. Rejaei, H. Schellevis, "Saddle add-on metallization for RF-IC technology",
    IEEE Transactions on Electron Devices, vol. 51, no. 3, 2004, pp. 460-466.

 

Reduction of substrate losses

  • J.N. Burghartz, "Progress in RF inductors on silicon-understanding substrate losses",
    IEEE International Electron Devices Meeting (IEDM), 1998, pp. 523-526.
  • B. Rong, J.N. Burghartz, L.K. Nanver, B. Rejaei, M. van der Zwan,
    "Surface-passivated high-resistivity silicon substrates for RFICs,
    IEEE Electron Devices Letters, vol. 25, no.4, 2004, pp. 176-178.

 

Inductor integration processes

  • J.N. Burghartz, M. Soyuer, K.A. Jenkins, M.D. Hulvey,
    "High-Q inductors in standard silicon interconnect technology and its application to an integrated RF power amplifier",
    Techn. Dig. International Electron Devices Meeting (IEDM), 1995, pp. 1015-1018.
  • N.P. Pham, K.T. Ng, M. Bartek, P.M. Sarro, B. Rejaei, J.N. Burghartz,
    "A micromachining post-process module for RF silicon technology",
    Techn. Dig. IEEE International Electron Devices Meeting", 2000, pp. 481-484.

 

Special inductor structures

  • J.N. Burghartz, K.A. Jenkins, M. Soyuer,
    "Multilevel-spiral inductors using VLSI interconnect technology",
    IEEE Electron Device Letters, vol. 17, no. 9, 1996, pp. 428-430.
  • J.N. Burghartz, A.E. Ruehli, K.A. Jenkins, M. Soyuer, D. Nguyen-Ngoc,
    "Novel substrate contact structure for high-Q silicon-integrated spiral inductors",
    1997, pp. 55-58.

 

Ferromagnetic core structures

  • Y. Zhuang, M. Vroubel, B. Rejaei, J.N. Burghartz,
    "Ferromagnetic RF inductors and transformers for standard CMOS/BiCMOS",
    Techn. Dig. IEEE International Electron Devices Meeting (IEDM), 2002, pp. 475-478.
  • M. Vroubel, Y. Zhuang, B. Rejaei, J.N. Burghartz,
    "Integrated tunable magnetic RF inductor",
    IEEE Electron Device Letters, vol. 25, no. 12, 2004, pp. 787-789.

 

Compact inductor design

  • J.N. Burghartz, B. Rejaei,
    "On the design of RF spiral inductors on silicon",
    IEEE Transactions on Electron Devices, vol. 50, no. 3, 2003, pp. 718-729.
  • J.N. Burghartz, D. Edelstein, M. Soyuer, H. Ainspan, K.A. Jenkins,
    "RF circuit design aspects of spiral inductors on silicon",
    Dig. Techn. P. IEEE International Solid-State Circuits Conference (ISSCC), 1998, pp. 246-247.

 

Themal effects

  • H. Sagkol, B. Rejaei, J.N. Burghartz,
    "Thermal Issues in Micromachined Spiral Inductors for High-Power Applications",
    IEEE Transaction on Electron Devices, vol. 55, no. 11, 2008, pp. 3288-3294.

 

Tutorial

  • J. Burghartz,
    "RF passives on silicon - the intended and the unintended",
    IEEE Expert Now Course Catalog

Bits&Chips March 2017

„Truth-Resistant Universal Micro Processor“


Bits&Chips July 2016

„Micro-GaN voor macro-power“


Bits&Chips September 2015

„Onderzoeker, wat is jouw v-factor?“


Bits&Chips April 2014

„Nanospijkerschrift“


pdficon_large Bits&Chips March 2013

„Ik ben toch niet gek“


Bits&Chips August 2012

„Masterplan DIMES“


Bits&Chips February 2011

„Waterlelies“


Bits&Chips May 2010

„Campus“


Bits&Chips December 2009

„Dr. ind.“


Bits&Chips June 2009

„Macro-elektronica“


Bits&Chips March 2009

„Plastic valleien“


Bits&Chips December 2008

„Spitzencluster“


Bits&Chips June 2008

„Nadeelurenkaart“


Bits&Chips February 2008

„Wedergeboorte van de gate array“


Bits&Chips September 2007

„De grote en kleine wereld van beeldsensoren“


Bits&Chips May 2007

„Het recept voor toponderzoek“


Bits&Chips October 2006

„Siliciumjasjes“


Bits&Chips March 2006

„Knopje in het oor“


Bits&Chips January 2005

„Micro-eletronica naar het bejaardenhuis?“


Bits&Chips May 2004

„Wet van Moore recyclen“


Bits&Chips November 2003

„Bipolaire transistor heeft de toekomst“


Bits&Chips May 2002

„Communicatie wordt drijvende kracht chipproductietechnologie“

Mechatronica&Machinebouw May 2014

„Duitse spitzencluster moeten uitvliegen“


Mechatronica Magazine March 2010

„Campus“


books-state

Concise, high quality and comparative overview of state-of-the-art electron device development, manufacturing technologies and applications

Guide to State-of-the-Art Electron Devices marks the 60th anniversary of the IRE electron devices committee and the 35th anniversary of the IEEE Electron Devices Society, as such it defines the state-of-the-art of electron devices, as well as future directions across the entire field.

  • Spans full range of electron device types such as photovoltaic devices, semiconductor manufacturing and VLSI technology and circuits, covered by IEEE Electron and Devices Society
  • Contributed by internationally respected members of the electron devices community
  • A timely desk reference with fully-integrated colour and a unique lay-out with sidebars to highlight the key terms
  • Discusses the historical developments and speculates on future trends to give a more rounded picture of the topics covered

IEEE`s "Guide to State-of-the-Art Electron Devices" published by Prof. Dr. Joachim Burghartz was awarded the PROSE Award 2013 on February 6th, 2014 in the Engineering & Technology category.

Guide to State-of-the-Art Electron Devices



books-chips

Ultra-thin Chip Technology and Applications edited by: Joachim N. Burghartz Ultra-thin chip technology has the potential to provide solutions for overcoming bottlenecks in silicon technology and for leading to new applications. This book shows how very thin and flexible chips can be fabricated and used in many new applications in microelectronics, microsystems, biomedical and other fields. It provides a comprehensive reference to the fabrication technology, post processing, assembly, characterization, modeling and applications of ultra-thin chips.

  • Provides a comprehensive overview of the challenges in ultra-thin chip fabrication, post processing, properties and applications by leaders in the field sharing their newest results and ideas;
  • Compares strengths and weaknesses of three generic fabrication processes for ultra-thin chips;
  • Describes electronic, mechanical, optical, and thermal properties of ultra-thin chips that are different from those of conventional, thick chips;
  • Shows that thin chip technology and its applications represents a new paradigm in silicon technology.

Ultra-thin Chip Technology and Applications

To the top of the page